Affiliation:
1. Fraunhofer Institute of Integrated Systems and Device Technology (IISB)
2. Fraunhofer Center Nanoelectronic Technology
Abstract
The paper reviews recent progress and current challenges in implementing high-k dielectrics
in microelectronics. Logic devices, non-volatile-memories, DRAMs and low power mixedsignal
components are found to be the technologies where high-k dielectrics are implemented or
will be introduced soon. Two gate architectures have to be considerd: MOS with metal as gate electrode
and MIM. In particular, Hf-silicates for logic and NVM devices in conventional MOS architecture
and ZrO2 for DRAM cells in MIM architecture are discussed.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
6 articles.
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