Characteristics of ALD High-k HfAlOx Nanocrystals in Memory Capacitors Annealed at High Temperatures
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Published:2010-10-01
Issue:3
Volume:33
Page:347-353
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Li Wei-Chih,Banerjee Writam,Maikap Sidhu,Yang Jer-Ren
Abstract
Nanoscale (EOT=9.3 nm) nonvolatile memory capacitors by using atomic layer deposited high-k HfAlOx nanocrystals have been investigated. The high-k HfAlOx nanocrystals have been investigated by TEM, EDX and XPS. Due to the charge confinement in the high-k HfAlOx nanocrystals a memory window of 0.7V can be observed after 10 days of retention.
Publisher
The Electrochemical Society