Layer structure variations of ultra-thin HfO2 films induced by post-deposition annealing
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference32 articles.
1. On the scaling issues and high-k replacement of ultra-thin gate dielectrics for nanoscale MOS transistors;Wong;Microelectron. Eng.,2006
2. International Technology Roadmap for Semiconductors, Edition. http://www.itrs.net/Links/2009ITRS/Home2009.htm, 2009.
3. High-k gate dielectrics: current status and materials properties considerations;Wilk;J. Appl. Phys.,2001
4. High dielectric constant oxides;Robertson;Eur. Phys. J. Appl. Phys.,2004
5. High-k: latest developments and perspectives;Bauer;Mater. Sci. Forum.,2008
Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Sub-volt metal-oxide thin-film transistors enabled by solution-processed high-k Gd-doped HfO2 dielectric films;Materials Science in Semiconductor Processing;2023-11
2. Hf-doped ZnO transistor with high bias stability and high field-effect mobility by modulation of oxygen vacancies and interfaces;Journal of Materials Science & Technology;2023-11
3. Sharp Transformation across Morphotropic Phase Boundary in Sub‐6 nm Wake‐Up‐Free Ferroelectric Films by Atomic Layer Technology;Advanced Science;2023-09-27
4. Effect of Y2O3 interlayer on the electric properties of Y-doped HfO2 film deposited by chemical solution deposition;Ceramics International;2023-03
5. Low-Temperature Dopant-Assisted Crystallization of HfO2 Thin Films;Crystal Growth & Design;2021-10-12
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3