Ferroelectric and antiferroelectric properties of Si-doped HfO2 thin films

Abstract

Ferroelectric and antiferroelectric HfO2 nano-films were prepared by changing silicon doping concentration, and their basic properties conpared in terms of polarization hysteresis, capacitance-voltage and leakage-voltage behavior, as well as the effect of temperature on phase stability. Antiferroelectric thin film exhibits a higher dielectric constant than the ferroelectric film, and is characterized by the double polarization hysteresis loops due to reversible antiferroelectric-ferroelectric phase transition induced during loading and unloading processes of electric field. No antiferroelectric-paraelectric phase transition is observed at measuring temperatures up to 185 ℃. The negative differential resistivity effect observed in leakage measurements is attributed to the contributions from slow response mechanisms like polarization relaxation.