Affiliation:
1. Central Research Institute of Electric Power Industry (CRIEPI)
2. Kansai Electric Power Co., Inc.
Abstract
We investigated the location of the nuclei of Shockley-type stacking faults (SSFs) in the
4H-SiC pin diodes, using electroluminescence (EL) imaging. The nuclei of SSFs were identified as
three types, located (i) on the mesa edge, (ii) in the surface region, and (iii) inside the epilayer. We
compared the frequency of the nuclei according to these three locations for the (0001) and (000-1) pin
diodes. The number of SSFs originated from the nuclei inside the epilayer in the (000-1) pin diodes
was much less (<4 cm-2) than that in the (0001) pin diodes. However, the numbers of SSF nuclei (0.3
~ 0.8 per device) located on the mesa wall and the surface region in the (000-1) pin diodes were
comparable to the (0001) pin diodes. We also investigated the process responsible for generating the
SSF nuclei.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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