Growth of Thick 4H-SiC$(000\bar{1})$ Epilayers and Reduction of Basal Plane Dislocations-Reference-Cited by-同舟云学术

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Growth of Thick 4H-SiC$(000\bar{1})$ Epilayers and Reduction of Basal Plane Dislocations

Published:2005-06-10 Issue:No. 25 Volume:44 Page:L806-L808
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Tsuchida Hidekazu,Kamata Isaho,Miyanagi Toshiyuki,Nakamura Tomonori,Nakayama Koji,Ishii Ryousuke,Sugawara Yoshitaka

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In-situ and ex-situ characterizations of PVT-grown 4H-SiC single crystals;Journal of Physics D: Applied Physics;2024-09-03

2. Influence of the facet trace region in 4H-SiC substrate on the glide and propagation behaviors of basal plane dislocations in 4H-SiC homoepitaxial layers;Journal of Applied Physics;2021-09-07

3. Defect engineering in SiC technology for high-voltage power devices;Applied Physics Express;2020-11-26

4. Effects of stacking faults on electron transport in 4H-SiC n-type epilayers under unipolar operation evaluated by TCAD simulation;Japanese Journal of Applied Physics;2020-04-29

5. Growth of high-quality 4H-SiC epitaxial layers on 4° off-axis C-face 4H-SiC substrates;Journal of Crystal Growth;2020-02

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