4H-SiC P+N UV Photodiodes for Space Applications
-
Published:2015-06
Issue:
Volume:821-823
Page:644-647
-
ISSN:1662-9752
-
Container-title:Materials Science Forum
-
language:
-
Short-container-title:MSF
Author:
Berenguier B.1, Ottaviani Laurent1, Biondo Stéphane1, Lazar Mihai2, Milesi Frédéric3, Palais Olivier1, Torregrosa Frank4, Lyoussi A.5, Kalinina Evgenia4, Lebedev A.4
Affiliation:
1. Aix-Marseille University 2. Université de Lyon 3. CEA-LETI 4. Ion Beam Services 5. Laboratoire Dosimétrie Capteurs Instrumentation
Abstract
Spectral sensitivity measurements versus temperature have been carried out on irradiated SiC p+n photodiodes, fabricated using two different doping processes: Aluminium standard implantation and Boron plasma immersion ion implantation. The spectral sensitivity of Al doped photodiodes increase for incident wavelength higher than 270 nm, and are very stable below. Boron doped irradiated photodiodes show a general increase of the photoresponse for all wavelengths. In both cases, an hysteresis effect is observable when with the temperature. Results are presented and discussed.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference9 articles.
1. F. Issa, V. Vervisch, L. Ottaviani, D. Szalkai, L. Vermeeren, A. Lyoussi, A. Kuznetsov, M. Lazar, A. Klix, O. Palais, et A. Hallén, « Nuclear Radiation Detectors Based on 4H-SiC p(+)-n Junction », Edited by: Okumura, H; Harima, H; Kimoto, T; et al. Conference: 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013) Location: Miyazaki, JAPAN Date: SEP 29-OCT 04, 2013. Mater. Sci. Forum, vol. 778‑780, p.1046‑1049, (2014). 2. S. Biondo, L. Ottaviani, M. Lazar, D. Planson, J. Duchaine, V. Le Borgne, M. A. El Khakani, F. Milesi, W. Vervisch, O. Palais, et F. Torregrosa, « 4H-SiC P+N UV Photodiodes : A Comparison between Beam and Plasma Doping Processes », Mater. Sci. Forum, vol. 717‑720, p.1203‑1206, (2012). 3. « http: /www. ion-beam-services. com/nano_sys. htm. 4. B. Bérenguier, L. Ottaviani, S. Biondo, O. Palais, M. Lazar, F. Milesi, F. Torregrosa, E. Kalinina, A. Lebedev, W. Vervisch, et A. Lyoussi, « 4H-SiC P+N UV Photodiodes: Influence of Temperature and Irradiation », MRS Online Proc. Libr., vol. 1693, (2014). 5. H. Y. Tada et J. R. Carter, Solar cell radiation handbook. (1977).
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
|
|