4H-SiC P+N UV Photodiodes : A Comparison between Beam and Plasma Doping Processes

Author:

Biondo Stéphane1,Ottaviani Laurent2,Lazar Mihai3,Planson Dominique3,Duchaine Julian4,Le Borgne V.5,El Khakani M.A.5,Milesi Frédéric6,Vervisch Wilfried2,Palais Olivier2,Torregrosa Frank4

Affiliation:

1. Université Paul Cézanne

2. Aix-Marseille University

3. Université de Lyon

4. Ion Beam Services

5. Institut National de la Recherche Scientifique – Energie, Matériaux et Télécommunications (INRS-EMT)

6. CEA-LETI

Abstract

This paper presents a study of 4H-SiC UV photodetectors based on p+n thin junctions. Two kinds of p+ layers have been implemented, aiming at studying the influence of the junction elaborated by the ion implantation process (and the subsequent annealing) on the device characteristics. Aluminum and Boron dopants have been introduced by beam line and by plasma ion implantation, respectively. Dark currents are lower with Al-implanted diodes (2 pA/cm2 @ - 5 V). Accordingly to simulation results concerning the influence of the junction thickness and doping, plasma B-implanted diodes give rise to the best sensitivity values (1.5x10-1 A/W @ 330 nm).

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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