Realization of ultrashallow junctions by plasma immersion ion implantation and laser annealing-Reference-Cited by-同舟云学术

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Realization of ultrashallow junctions by plasma immersion ion implantation and laser annealing

Published:2008 Issue:1 Volume:26 Page:286
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Vervisch V.,Etienne H.,Torregrosa F.,Roux L.,Ottaviani L.,Pasquinelli M.,Sarnet T.,Delaporte P.

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recrystallization of the Argon-Plasma Immersion Implantation-Induced Amorphous Germanium with Laser Thermal Process;2023

2. Reduction of surface roughness and defect density by cryogenic implantation of arsenic;Japanese Journal of Applied Physics;2014-05-23

3. Improvement of P–N Junction Leakage and Reduction in Interface State Density in Transistors by Cryo Implantation Technology;Japanese Journal of Applied Physics;2013-10-01

4. THE EFFECT OF DOPANT DOSE LOSS DURING ANNEALING ON HEAVILY DOPED SURFACE LAYERS OBTAINED BY RECOIL IMPLANTATION OF ANTIMONY IN SILICON;Surface Review and Letters;2013-08

5. LBIC measurement optimization to detect laser annealing induced defects in Si;Materials Science and Engineering: B;2012-11

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