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Improvement of P–N Junction Leakage and Reduction in Interface State Density in Transistors by Cryo Implantation Technology

  • Published:2013-10-01 Issue:10R Volume:52 Page:105501
  • ISSN:0021-4922
  • Container-title:Japanese Journal of Applied Physics
  • language:
  • Short-container-title:Jpn. J. Appl. Phys.

Author:

Murakoshi Atsushi,Iwase Masao,Niiyama Hiromi,Tomita Mitsuhiro,Suguro Kyoichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electronic structure of GaP/Si (001) heterojunctions and the role of hydrogen passivation;Progress in Photovoltaics: Research and Applications;2019-05-27

2. Challenges in ultra-shallow junction technology;CMOS Past, Present and Future;2018

3. Evolution of secondary defects in arsenic implanted Si;Japanese Journal of Applied Physics;2016-03-17

4. Boron diffusion layer formation using Ge cryogenic implantation with low-temperature microwave annealing;Japanese Journal of Applied Physics;2016-03-02

5. Reduction of surface roughness and defect density by cryogenic implantation of arsenic;Japanese Journal of Applied Physics;2014-05-23
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