Electrophysical and Optical Properties of 4H-SiC UV Detectors Irradiated with Electrons

Abstract

Comparative studies of the structural, electrophysical properties and spectral sensitivity of 4H-SiC photodetectors of ultraviolet radiation in the spectral range of 200-400 nm were carried out before and after electron irradiations. Photodetectors with Cr Schottky barriers with thickness of 20 nm and 8 mm diameter were formed on n-4H-SiC CVD epitaxial layers with a thickness of 5 μm and concentration Nd-Na= (1-4) х1014 cm-3. Cr/4H-SiC photodiodes were irradiated by electrons at 0.9 MeV energy with doses (0.2-1) x1016 cm-2.