Nuclear Radiation Detectors Based on 4H-SiC p<sup>+</sup>-n Junction-Reference-Cited by-同舟云学术

Nuclear Radiation Detectors Based on 4H-SiC p⁺-n Junction

Published:2014-02 Issue: Volume:778-780 Page:1046-1049
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Issa Fatima¹,Vervisch Vanessa¹,Ottaviani Laurent¹,Szalkai Dora²,Vermeeren Ludo³,Lioussy Abdallah⁴,Kuznetsov Andrej⁵,Lazar Mihai⁶,Klix Axel²,Palais Olivier¹,Hallén Anders⁷

Affiliation:

1. Aix-Marseille University

2. TU Dresden and Reactor Technology Helmholtz-Zentrum

3. Belgian Nuclear Research Center (SCK•CEN)

4. Instrumentation Sensors and Dosimetry Laboratory

5. University of Oslo

6. Université de Lyon

7. KTH Royal Institute of Technology

Abstract

Silicon carbide (SiC) radiation detectors were realized by 10B implantation into the metal contact in order to avoid implantation-related defects within the sensitive area of the 4H-SiC pn junction. No post implantation annealing was performed. Such detectors respond to thermal neutrons showing consistent counting rates as function of external reverse bias voltages and radiation intensity.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.778-780.1046.pdf

Reference7 articles.

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