Affiliation:
1. IMB-CNM, CSIC
2. Center for Advancing Electronics Dresden (Cfaed)
3. ON Semiconductor
4. Helmholtz-Zentrum Dresden-Rossendorf (HZDR)
Abstract
Long-term degradation of MOS devices has to be avoided in different harsh irradiated environments, especially for aerospace or military applications. In this paper, an overview of the irradiation experiments recently performed on 4H-SiC MOSFETs having an oxynitrided gate oxide is given, with a special focus on the threshold voltage and the effective channel mobility drifts. The general mechanisms taking place during irradiation and post-annealing treatments are described. Finally, new open issues recently observed by performing the temperature measurement on irradiated MOSFETs will be introduced and discussed.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference10 articles.
1. R. Oldham and F.B. McLean Total ionizing Dose Effects in MOS Oxides and Devices, IEEE Trans. on Nucl. Sci., Vol. 50, No. 3, (2003).
2. A. Holmes-Siedle and L. Adams, Handbook of radiation effects,. Oxford University Press, Ch 4, pp.98-108, (1993).
3. M. Alexandru, M. Florentin et al., 5 MeV Proton and 15 MeV Electron Radiation Effects Study on 4H-SiC nMOSFET Electrical Parameters, IEEE Trans. on. Nuclear Science, Vol. 61, Issue 4, (2014).
4. M. Florentin, M. Alexandru, et al., Low energy proton radiation impact on 4H-SiC nMOSFET gate oxide stability, Material Science forum Vols. 778-780 pp.525-528, (2014).
5. L. Gonella, F. Faccio, et al., Nuclear instruments and Methods in Physics Research A 582, (2007).
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