Displacement damage and total ionisation dose effects on 4H‐SiC power devices-Reference-Cited by-同舟云学术

Displacement damage and total ionisation dose effects on 4H‐SiC power devices

Published:2019-10-29 Issue:15 Volume:12 Page:3910-3918
ISSN:1755-4543
Container-title:IET Power Electronics
language:en
Short-container-title:IET Power Electronics

Author:

Hazdra Pavel¹^ORCID,Popelka Stanislav¹

Affiliation:

1. Department of MicroelectronicsFaculty of Electrical EngineeringCzech Technical University in PragueTechnická 2166 27Prague 6Czech Republic

Funder

Ministerstvo Školství, Mládeže a Tělovýchovy

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-pel.2019.0049

Reference51 articles.

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4. Gamma‐ray irradiation response of the motor‐driver circuit with SiC MOSFETs;Kobayashi Y.;Mater. Sci. Forum,2016

5. Power Products. Available athttp://www.wolfspeed.com/power/products accessed 26 December 2018

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