Low Energy Proton Radiation Impact on 4H-SiC nMOSFET Gate Oxide Stability-Reference-Cited by-同舟云学术

Low Energy Proton Radiation Impact on 4H-SiC nMOSFET Gate Oxide Stability

Published:2014-02 Issue: Volume:778-780 Page:525-528
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Florentin Matthieu¹,Alexandru Mihaela¹,Constant Aurore²,Schmidt Bernd³,Millan José¹,Godignon Philippe¹

Affiliation:

1. IMB-CNM, CSIC

2. ON Semiconductor

3. Institute of Ion Beam Physics and Materials Research

Abstract

The 4H-SiC MOSFET electrical response to 180 keV proton radiations at three different fluences has been evaluated. For a certain dose, the devices show an apparent improvement of their electrical characteristics likely due to the N and/or H atoms diffusion inside the oxide layer. This work complete our previous studies on high energy proton irradiation, showing that the 4H-SiC MOSFET is also robust to the low energy proton radiation, when the proton implanted range is located near the MOS interface.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.778-780.525.pdf

Reference8 articles.

1. A. Holmes-Siedle and L. Adams, Handbook of radiation effects,. Ch 4, pp.95-197 (1993).

2. A. Castaldini et al, Deep levels by proton and electron irradiation in 4H–SiC, J. Appl. Phys. 98, 053706 (2005).

3. M. Florentin et al, 10 MeV Proton Irradiation Effect on 4H-SiC nMOSFET Electrical Parameters,. HETEROSiC Proc. (2013).

4. M. Alexandru et al, 5MeV Proton and 15MeV Electron Radiation Effects Study on 4H-SiC nMOSFET Electrical Parameters, . RADEC Proc. (2013).

5. A. Constant et al Effects of photons on the rapid thermal oxidation of 4H-SiC using nitrous oxide gas, J. Electrochem. Soc, 157 (6), G136 (2010).

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