Effect of high energy (15 MeV) proton irradiation on vertical power 4H-SiC MOSFETs
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6641/ab0590/pdf
Reference28 articles.
1. 10-kV, 123-m<tex>$Omega cdot $</tex>cm<tex>$^2$</tex>4H-SiC Power DMOSFETs
2. Impacts of gate bias and its variation on gamma-ray irradiation resistance of SiC MOSFETs
3. Investigation of sensitivity and threshold voltage shift of commercial MOSFETs in gamma irradiation
4. Radiation Effects in Commercial 1200 V 24 A Silicon Carbide Power MOSFETs
5. Spatial Localization of Carrier Traps in 4H-SiC MOSFET Devices Using Thermally Stimulated Current
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1. Radiation-Induced Effects in SiC Vertical Power MOSFETs Irradiated at Ultrahigh Doses;IEEE Transactions on Nuclear Science;2024-04
2. Impact of Proton Irradiation at Different Temperatures on 100 V VDMOSFETs;2023 8th International Conference on Integrated Circuits and Microsystems (ICICM);2023-10-20
3. Proton Irradiation-Induced Reliability Degradation of SiC Power MOSFET;IEEE Transactions on Nuclear Science;2023-08
4. Solution Processed Schottky Diodes Enabled by Silicon Carbide Nanowires for Harsh Environment Applications;Nano Letters;2023-04-03
5. Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p–n Junctions;Materials;2021-04-14
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