Quantitative Study of the Role of Supersaturation during Sublimation Growth on the Yield of 50 mm 3C-SiC

Author:

Rankl Dominik1,Jokubavicius Valdas2,Syväjärvi Mikael2,Wellmann Peter J.1

Affiliation:

1. University of Erlangen

2. Linköping University

Abstract

We have investigated the growth of 3C-SiC using sublimation growth in the temperature range from 1800°C to 1950°C. The supersaturation was determined using numerical modeling of the temperature field and gas phase composition by applying quasi-equilibrium thermodynamic conditions. Analysis of the 3C-SiC yield was carried out by optical microscopy, optical absorption, Raman spectroscopy and x-ray analysis. Quantitative data on supersaturation are compared with most stable 3C-SiC nucleation and growth condition. Finally the application to large area growth in a physical vapor transport growth reactor is briefly addressed.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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