Modeling of the Mass Transport during Homo-Epitaxial Growth of Silicon Carbide by Fast Sublimation Epitaxy-Reference-Cited by-同舟云学术

Modeling of the Mass Transport during Homo-Epitaxial Growth of Silicon Carbide by Fast Sublimation Epitaxy

Published:2013-01 Issue: Volume:740-742 Page:52-55
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Hupfer Thomas¹,Hens Philip²,Kaiser Michl¹,Jokubavicius Valdas²,Syväjärvi Mikael²,Wellmann Peter J.¹

Affiliation:

1. University of Erlangen-Nuremberg

2. Linköping University

Abstract

Ballistic and diffusive growth regimes in the Fast Sublimation Growth Process of silicon carbide can be determined using suggested theoretical model for the mean free path calculations. The influences of temperature and inert gas pressure on the mass transport for the growth of epitaxial layers were analyzed theoretically and experimentally.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.740-742.52.pdf

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