Sublimation Epitaxial Growth of Hexagonal and Cubic SiC
Author:
Publisher
Elsevier
Reference72 articles.
1. Structural perfection of epitaxial layers of 3C-SiC grown by vacuum sublimation on 6H-SiC substrates;Andreev;Semiconductors,1997
2. Influence of growth conditions on the structural perfection of β-SiC epitaxial layers fabricated on 6H-SiC substrates by vacuum sublimation;Andreev;Materials Science and Engineering,1997
3. Kinetics of crystal growth;Bennema,1973
4. Terrace growth and polytype development in epitaxial β-SiC films on α-SiC (6H and 15R) substrates;Chien;Journal of Materials Research,1994
5. Thermodynamic study of SiC utilizing a mass spectrometer;Drowart;Journal of Chemical Physics,1958
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. 4H to 3C Polytypic Transformation in Al+ Implanted SiC During High Temperature Annealing;Electronic Materials Letters;2023-12-02
2. Dependence of Photoluminescence Emission on Excitation Power and Temperature in Highly Doped 6H- SiC;Physical Review Applied;2020-06-01
3. Influence of negative-Ucenters related carrier dynamics on donor-acceptor-pair emission in fluorescent SiC;Journal of Applied Physics;2018-08-07
4. Advances in wide bandgap SiC for optoelectronics;The European Physical Journal B;2014-03-10
5. Fabrication of Broadband Antireflective Sub-Wavelength Structures on Fluorescent SiC;Materials Science Forum;2013-01
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3