Structural perfection of epitaxial layers of 3C-SiC grown by vacuum sublimation on 6H-SiC substrates-Reference-Cited by-同舟云学术

Structural perfection of epitaxial layers of 3C-SiC grown by vacuum sublimation on 6H-SiC substrates

Published:1997-03 Issue:3 Volume:31 Page:232-236
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Andreev A. N.,Smirnova N. Yu.,Tregubova A. S.,Shcheglov M. P.,Chelnokov V. E.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187112.pdf

Reference21 articles.

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2. D. K. Ferry, Phys. Rev. B 12, 2361 (1979).

3. V. Shields, K. Fekade, and M. Spencer, Proceedings of the fifth SiC and Related Materials Conf. (Washington, D.C., 1993) [Inst. Phys. Conf., Ser. 137, 21 (Bristol and Philadelphia, 1994)].

4. H. Matsunami, S. Nishino, and H. Ono, IEEE Trans. Electron. Dev. ED-28, 1235 (1981).

5. J. A. Powell, J. B. Petit, L. G. Matus, and S. E. Lempner, Proc. 3rd Int. Conf. on Amorph. and Cryst. SiC [Springer Proc. Phys. 56, 313 (1992)].

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