Passivation of 4H-SiC/SiO<sub>2</sub> Interface Traps by Oxidation of a Thin Silicon Nitride Layer-Reference-Cited by-同舟云学术

Passivation of 4H-SiC/SiO₂ Interface Traps by Oxidation of a Thin Silicon Nitride Layer

Published:2015-06 Issue: Volume:821-823 Page:508-511
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Mikhaylov A.I.¹,Afanasyev Alexey V.¹,Luchinin Victor V.¹,Reshanov S.A.²,Schöner Adolf²,Knoll Lars³,Minamisawa Renato Amaral³,Alfieri Giovanni³,Bartolf Holger³

Affiliation:

1. Saint-Petersburg Electrotechnical University “LETI”

2. Ascatron AB

3. ABB Switzerland Ltd

Abstract

The effect of the alternative nitridation process of the 4H-SiC/SiO2interface by introduction of a thin silicon nitride layer on the electrical properties of the gate oxide has been investigated.C-VandG-Vmeasurements on inversion-channel MOS devices revealed similar results to the conventional N2O oxidation. Higher field-effect mobility values are achieved due to lower interface roughness of the alternative nitridation process. However, insignificant degradation of the reliability was observed.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.821-823.508.pdf

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