Development of a novel 1200-V-class 4H-SiC implantation-and-epitaxial trench MOSFET with low on-resistance
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/55/i=4S/a=04ER06/pdf
Reference38 articles.
1. Technological Breakthroughs in Growth Control of Silicon Carbide for High Power Electronic Devices
2. Present Status and Future Prospect of Widegap Semiconductor High-Power Devices
3. Characteristics of 600, 1200, and 3300 V Planar SiC-MOSFETs for Energy Conversion Applications
4. SiC—Emerging Power Device Technology for Next-Generation Electrically Powered Environmentally Friendly Vehicles
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3. Experimental and simulation studies of surface segregation-limited nitrogen incorporation at the growth front of physical vapor transport-grown 4H-SiC crystals;Journal of Applied Physics;2023-07-26
4. Enhanced nitrogen incorporation in the 〈112̄0〉 directions on the (0001̄) facet of 4H-SiC crystals;Japanese Journal of Applied Physics;2022-08-15
5. Correlation between the step–terrace structure and the nitrogen doping variation observed on the ( 000 1 ¯ ) facet of 4H-SiC crystals;Journal of Applied Physics;2020-10-07
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