Characteristics of 600, 1200, and 3300 V Planar SiC-MOSFETs for Energy Conversion Applications

Author:

Imaizumi Masayuki,Miura Naruhisa

Funder

Ministry of Economy, Trade and Industry

New Energy and Industrial Technology Development Organization through the Project entitled Novel Semiconductor Power Electronics Project Realizing Low Carbon Emission Society through the Research and Development Partnership for Future Power Electronics Technology, Minato, Japan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

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1. TCAD Analysis of Single-Event Burnout Hardness for an Improved CoolSiC Trench MOSFET;IEEE Transactions on Electron Devices;2024-08

2. Advanced voltage balancing techniques for series-connected SiC-MOSFET devices: A comprehensive survey;Power Electronic Devices and Components;2024-04

3. A simulation study of vertical Ga2O3 Schottky barrier diodes using field plate termination;Japanese Journal of Applied Physics;2024-01-23

4. Series Capacitance Gate Driver to Suppress Voltage Oscillation of SiC MOSFET;IEEE Journal of the Electron Devices Society;2024

5. A Control Strategy for SiC-Based High-Frequency High-Power Train Auxiliary Inverter;2023 5th International Academic Exchange Conference on Science and Technology Innovation (IAECST);2023-12-08

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