Advanced voltage balancing techniques for series-connected SiC-MOSFET devices: A comprehensive survey-Reference-Cited by-同舟云学术

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Advanced voltage balancing techniques for series-connected SiC-MOSFET devices: A comprehensive survey

Published:2024-04 Issue: Volume:7 Page:100055
ISSN:2772-3704
Container-title:Power Electronic Devices and Components
language:en
Short-container-title:Power Electronic Devices and Components

Author:

Alves Luciano F.S.^ORCID,Lefranc Pierre,Jeannin Pierre-Olivier,Sarrazin Benoit

Publisher

Elsevier BV

Reference137 articles.

1. Influence of device parameters spread on current distribution of paralleled silicon carbide MOSFETs;Abuogo;Journal of Power Electronics,2019

2. Analysis of the multi-steps package (MSP) for series-connected SiC-MOSFETs;Alves;Electronics,2020

3. SiC power devices in power electronics: An overview;Alves,2017

4. Review on SiC-MOSFET devices and associated gate drivers;Alves,2018

5. A new gate drive power supply configuration for common mode conducted EMI reduction in phase-shifted full-bridge converter;Alves;IEEE Transactions on Power Electronics,2020

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gate driver, snubber and circuit design considerations for fast‐switching series‐connected SiC MOSFETs;IET Power Electronics;2024-07-05

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