Reduction of Implantation-Induced Point Defects by Germanium Ions in n-Type 4H-SiC-Reference-Cited by-同舟云学术

Reduction of Implantation-Induced Point Defects by Germanium Ions in n-Type 4H-SiC

Published:2015-06 Issue: Volume:821-823 Page:347-350
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Sledziewski Tomasz¹,Ellrott Gunter¹,Rösch W.¹,Weber Heiko B.¹,Krieger Michael¹

Affiliation:

1. Friedrich-Alexander-Universität Erlangen-Nürnberg

Abstract

We have investigated the electrical properties of germanium-implanted n-type 4H-SiC epitaxial layers. Deep level transient spectroscopy (DLTS) was employed in order to study the influence of germanium ions on implantation-induced point defects. In particular, we observe a decrease of the concentration of Z1/2defect with increasing dose of implanted germanium.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.821-823.347.pdf

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