The electrical characteristics of silicon carbide alloyed with germanium-Reference-Cited by-同舟云学术

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The electrical characteristics of silicon carbide alloyed with germanium

Published:2001-05 Issue: Volume:175-176 Page:505-511
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Katulka G,Roe K,Kolodzey J,Eldridge G,Clarke R.C,Swann C.P,Wilson R.G

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference5 articles.

1. J. Ziegler, The Stopping and Range of Ions in Solids, Pergamon Press, Oxford, 1985.

2. Algorithms for the rapid simulation of Rutherford backscattering spectra

3. Heterodyning far-infrared radiation using coherently controlled directional photocurrent in semiconductors

4. T.N. Oder, J.R. Williams, M.J. Bozack, V. Iyer, S.E. Mohney, J. Crofton, J. Electron. Mater. 27 (4) (1998).

5. J.M. Shannon, Appl. Phys. Lett. 24 (8) (1974).

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1. Growth and doping of silicon carbide with germanium: a review;Critical Reviews in Solid State and Materials Sciences;2021-03-24

2. Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition;Journal of Applied Physics;2016-11-28

3. Defects in Ge Doped SiC Crystals;Journal of Inorganic Materials;2016

4. Preliminary Study on the Effect of Micrometric Ge-Droplets on the Characteristics of Ni/4H-SiC Schottky Contacts;Materials Science Forum;2015-06

5. Reduction of Implantation-Induced Point Defects by Germanium Ions in n-Type 4H-SiC;Materials Science Forum;2015-06

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