Defects in Ge Doped SiC Crystals-Reference-Cited by-同舟云学术

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Defects in Ge Doped SiC Crystals

Published:2016 Issue:11 Volume:31 Page:1166
ISSN:1000-324X
Container-title:Journal of Inorganic Materials
language:en
Short-container-title:Journal of Inorganic Materials

Author:

Fu-Sheng ZHANG,Xiu-Fang CHEN,Ying-Xin CUI,Long-Fei XIAO,Xue-Jian XIE,Xian-Gang XU,Xiao-Bo HU

Publisher

Shanghai Institute of Ceramics

Subject

Inorganic Chemistry,General Materials Science

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Molecular dynamics simulating the effects of Shockley-type stacking faults on the radiation displacement cascades in 4H-SiC;RSC Advances;2024

2. Growth and doping of silicon carbide with germanium: a review;Critical Reviews in Solid State and Materials Sciences;2021-03-24

3. Stacking Faults in 4H-SiC Single Crystal;Journal of Inorganic Materials;2018

4. Characterization and Electrical Property of Impurity Concentration in Ge-N Codoped SiC Crystals;Journal of Inorganic Materials;2018

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