Effect of Various Crucibles for High Quality AIN Crystal Growth on SiC Seed by PVT Method-Reference-Cited by-同舟云学术

Effect of Various Crucibles for High Quality AIN Crystal Growth on SiC Seed by PVT Method

Published:2015-06 Issue: Volume:821-823 Page:1007-1010
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Lee Hee Jun¹,Lee Hee Tae¹,Shin Hee Won¹,Park Mi Seon¹,Jang Yeon Suk¹,Lee Won Jae¹,Kim Dong Yeob²,Hong Soon Ku²,Kim Jung Gon³

Affiliation:

1. Dong-Eui University

2. Chungnam National University

3. DGIST

Abstract

Aluminum nitride (AlN) bulk crystals, approximately 50.8mm in diameter and up to 5mm thickness, were grown by a physical vapor transport (PVT) method in a tantalum crucible. To investigate the effect of crucible materials, various crucible materials, a graphite and TaC-coated graphite and tantalum crucible were used for the AlN growth. XRD pattern of AlN crystal grown on SiC seed in the Ta-crucible exhibited only (00l) peaks, indicating that AlN single crystal was successfully grown on SiC seed. The interface structure between AlN and SiC crystals was observed by a high resolution TEM.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.821-823.1007.pdf

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