Growth of AlN bulk crystals on SiC seeds: Chemical analysis and crystal properties-Reference-Cited by-同舟云学术

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Growth of AlN bulk crystals on SiC seeds: Chemical analysis and crystal properties

Published:2012-01 Issue:1 Volume:339 Page:13-21
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Bickermann Matthias,Filip Octavian,Epelbaum Boris M.,Heimann Paul,Feneberg Martin,Neuschl Benjamin,Thonke Klaus,Wedler Elke,Winnacker Albrecht

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference73 articles.

1. Advances in Bulk Crystal Growth of AlN and GaN

2. Nucleation and growth kinetics of AlN films on atomically smooth 6H–SiC (0001) surfaces

3. Influence of buffer layer and 6H-SiC substrate polarity on the nucleation of AlN grown by the sublimation sandwich technique

4. Seeded PVT Growth of Aluminum Nitride on Silicon Carbide

5. Growth of AlN crystals on AlN/SiC seeds by AlN powder sublimation in nitrogen atmosphere

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface Control of AlN Single Crystal Growth on SiC Substrate;Crystal Growth & Design;2024-05-22

2. State-of-the-art and prospective progress of growing AlN substrates by physical vapor transport;Journal of Crystal Growth;2023-09

3. Impacts of Si-doping on vacancy complex formation and their influences on deep ultraviolet luminescence dynamics in Al x Ga1-x N films and multiple quantum wells grown by metalorganic vapor phase epitaxy;Japanese Journal of Applied Physics;2021-12-28

4. Common issues in the hetero-epitaxial seeding on SiC substrates in the sublimation growth of AlN crystals;Applied Physics A;2021-07-24

5. Origin of Green Coloration in AlN Crystals Grown on SiC Seeds;Semiconductors;2021-06

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