Affiliation:
1. CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH
Abstract
It has been found that association of iron-boron (FeB) pairs takes place during illumination of iron contaminated boron-doped silicon. The established FeB pair model is interpreted with respect to the quasi-Fermi level position, the stability condition of FeB pairs and the steady state reaction between interstitial iron, electrons and boron. At an excess charge carrier density of Δn = 5.4·1014cm-3, still 5 % of the interstitial iron associates to FeB pairs.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
Cited by
6 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献