Dissociation and Formation Kinetics of Iron–Boron Pairs in Silicon after Phosphorus Implantation Gettering-Reference-Cited by-同舟云学术

Dissociation and Formation Kinetics of Iron–Boron Pairs in Silicon after Phosphorus Implantation Gettering

Published:2019-08-14 Issue:17 Volume:216 Page:1900253
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Khelifati Nabil¹^ORCID,Laine Hannu S.²,Vähänissi Ville²,Savin Hele²,Bouamama Fatima Zohra³,Bouhafs Djoudi¹

Affiliation:

1. Research Center in Semiconductor Technology for the EnergeticDevelopment of Semiconductor Conversion Devices Bd. 2 Frantz Fanon, les sept merveilles B.P.140 16038 Algiers Algeria

2. Department of Micro- and NanosciencesAalto University 02150 Espoo Finland

3. Ferhat Abbas University—Sétif 1 Campus El Bez. 19000 Sétif Algeria

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900253

Reference22 articles.

1. Chemical natures and distributions of metal impurities in multicrystalline silicon materials

2. Electronic properties of interstitial iron and iron-boron pairs determined by means of advanced lifetime spectroscopy

3. Iron contamination in silicon technology

4. Iron and its complexes in silicon

5. The Properties of Iron in Silicon

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of Illumination Spectrum on Dissociation Kinetics of Iron–Boron Pairs in Silicon;physica status solidi (a);2024-07-10

2. Intensification of iron–boron complex association in silicon solar cells under acoustic wave action;Journal of Materials Science: Materials in Electronics;2022-05-05

3. Estimation for iron contamination in Si solar cell by ideality factor: Deep neural network approach;Progress in Photovoltaics: Research and Applications;2022-01-17

4. Features of FeB pair light-induced dissociation and repair in silicon n+-p-p+ structures under ultrasound loading;Journal of Applied Physics;2021-12-21

5. The Role of Charge and Recombination‐Enhanced Defect Reaction Effects in the Dissociation of FeB Pairs in p‐Type Silicon under Carrier Injection;physica status solidi (RRL) – Rapid Research Letters;2021-01-06