Investigation of Degradation of Electrical Properties after Thermal Oxidation of p-Type Cz-Silicon Wafers
Author:
Affiliation:
1. CRTSE, Technology Research Center of Semiconductors for the Energetics, 02, Bd Frantz Fanon. BP 140 Alger 7 Merveilles, Algiers, Algeria
2. Ferhat Abbas University, Faculty of Technology, Department of Electronics, Setif, Algeria
Publisher
Institute of Physics, Polish Academy of Sciences
Subject
General Physics and Astronomy
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Study of the electrical properties of < 100 > Cz p-type solar-grade silicon wafers against the high-temperature processes;Applied Physics A;2021-05-11
2. Plasma immersion ion implantation (PIII): New path for optimizing doping profiles of advanced phosphorus emitters;AIP Conference Proceedings;2018
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