Plasma immersion ion implantation (PIII): New path for optimizing doping profiles of advanced phosphorus emitters
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http://aip.scitation.org/doi/pdf/10.1063/1.5049316
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1. Homojunction silicon solar cells doping by ion implantation
2. Toward 21% Efficiency nPERT Solar Cells with Selective Back Surface Field Technique
3. Phosphorus emitter engineering by plasma-immersion ion implantation for c-Si solar cells
4. Recombination at Metal-Emitter Interfaces of Front Contact Technologies for Highly Efficient Silicon Solar Cells
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1. Non-Destructive Evaluation of Toxic-Less Approach on Emitter Formation by Water-based Phosphoric Acid for n-Type Silicon;Silicon;2022-11-29
2. Time-resolved evolution of collisional transient sheath in plasma source ion implantation;Physica Scripta;2021-11-08
3. Towards all screen printed back-contact back-junction silicon solar cells;15th International Conference on Concentrator Photovoltaic Systems (CPV-15);2019
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