Homojunction silicon solar cells doping by ion implantation-Reference-Cited by-同舟云学术

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Homojunction silicon solar cells doping by ion implantation

Published:2017-10 Issue: Volume:409 Page:53-59
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Milési Frédéric,Coig Marianne,Lerat Jean-François,Desrues Thibaut,Le Perchec Jérôme,Lanterne Adeline,Lachal Laurent,Mazen Frédéric

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference20 articles.

1. High throughput ion implantation for low cost high efficiency silicon solar cells;Rohatgi;Energy Procedia,2012

2. High efficiency ion implantation silicon solar cells;Spitzer;IEEE Trans. Electron Devices,1984

3. Electronically activated boron-oxygen-related recombination centers in crystalline silicon;Bothe;J. Appl. Phys.,2006

4. B. Sopori et al., Understanding light-induced degradation of c-Si solar cells, in: 38th IEEE Photovoltaic Specialists Conference, 2012, pp. 1115–1120

5. Recombination activity of interstitial iron and other transition metal point defects in p- n-type crystalline silicon;Macdonald;Appl. Phys. Lett.,2004

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1. An Improved Process for Bifacial n-PERT Solar Cells Fabricated with Phosphorus Activation and Boron Diffusion in One-step High Temperature;Journal of Wuhan University of Technology-Mater. Sci. Ed.;2022-12

2. Advances in high efficiency crystalline silicon homo junction solar cell technology;AIP Conference Proceedings;2019

3. Trends in Physical Techniques of Boriding;Current Trends in Boriding;2018-12-31

4. Borided Materials;Current Trends in Boriding;2018-12-31

5. Effect of diffusion parameters on emitter formation in silicon solar cells by proximity rapid thermal diffusion;Materials Science in Semiconductor Processing;2018-04

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