Non-Destructive Evaluation of Toxic-Less Approach on Emitter Formation by Water-based Phosphoric Acid for n-Type Silicon-Reference-Cited by-同舟云学术

Non-Destructive Evaluation of Toxic-Less Approach on Emitter Formation by Water-based Phosphoric Acid for n-Type Silicon

Published:2022-11-29 Issue: Volume: Page:
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Mohd Rais Ahmad Rujhan,Mohd Ahir Zon Fazlila,Mohd Sinin Nurul Aqidah,Mohd Rostan Nur Fairuz,Sepeai Suhaila^ORCID,Ibrahim Mohd Adib,Sopian Kamaruzzaman

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s12633-022-02231-3.pdf

Reference51 articles.

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3. Kessler MA, Ohrdes T, Wolpensinger B, Harder NP (2010) Charge carrier lifetime degradation in Cz silicon through the formation of a boron-rich layer during BBr3 diffusion processes. Semicond Sci Technol. 25(5). https://doi.org/10.1088/0268-1242/25/5/055001

4. Chang NL, Wright M, Egan R, Hallam B (2020) The technical and economic viability of replacing n-type with p-type wafers for silicon heterojunction solar cells. Cell Reports Phys Sci 1(6):100069. https://doi.org/10.1016/j.xcrp.2020.100069

5. Müller R, et al. (2014) Evaluation of implantation annealing for highly-doped selective boron emitters suitable for screen-printed contacts. Sol Energy Mater Sol Cells 120, no. PART A, pp. 431–435. https://doi.org/10.1016/j.solmat.2013.06.040

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1. Reduced Toxicity and Aqueous-Based Solvent Using Phosphoric Acid as the Dopant Source for Formation Emitter Layer of Silicon Solar Cells;Silicon;2023-09-22

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