Affiliation:
1. French-German Research Institute of Saint-Louis (ISL)
2. Université de Lyon
3. RWTH Aachen University
Abstract
In this paper, we propose a graded etched junction termination extension for SiC thyristors. It has the functionality of a multiple implanted JTE, but is realized by purely etched means. This termination is demonstrated up to 4 kV on a sample with a drift layer thickness of 35 µm. On another sample with a thinner drift layer, similar thyristors have been realized with a low resistive contact, resulting in an on-state voltage drop of 3.2 V at 40 A/cm².
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
6 articles.
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