Pulse Current Characterization of SiC GTO Thyristors with Etched JTE-Reference-Cited by-同舟云学术

Pulse Current Characterization of SiC GTO Thyristors with Etched JTE

Published:2013-01 Issue: Volume:740-742 Page:986-989
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Scharnholz Sigo¹,Hassdorf Ralf²,Pâques Gontran¹,Vergne Bertrand¹,Planson Dominique³

Affiliation:

1. French-German Research Institute of Saint-Louis (ISL)

2. French-German Research Institute of Saint-Louis

3. Université de Lyon

Abstract

In this paper we highlight our latest results on high voltage SiC thyristors comprising an etched JTE. Compared to our previous design concepts, the thyristors described here are larger in size and have been investigated regarding pulsed power applications. Quasi-static on-state characteristics show that the devices withstand a repetitive current load of up to 16 A corresponding to a current density of 825 A/cm2. Their switching behavior was evaluated up to 1000 V demonstrating characteristic waveforms at turn-on and gate turn-off. Moreover, pulsed current characteristics show that the typical device under test sustained a current pulse of 20 μs with a peak value of 200 A and 10 kA/cm2, respectively.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.740-742.986.pdf

Reference9 articles.

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