Pulse Current Characterization of SiC GTO Thyristors

Author:

Scharnholz Sigo1,Vergne Bertrand1,Konrath Jens Peter1,Pâques Gontran1,Zorngiebel Volker1

Affiliation:

1. French-German Research Institute of Saint-Louis (ISL)

Abstract

With a focus on pulsed power applications, this paper presents results of the pulse current characterization of GTO thyristors developed and fabricated within a previous ISL funded project. Limited by the pulse current capability of the bonding wire connection, the devices demonstrated to handle a peak current of up to 6 kA/cm2 (about 20 µs FWHM). Pulse tests of Al wires indicate that two 50 µm wires should be sufficient to test a 1 mm2 device up to a peak current of 30 kA/cm2.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference6 articles.

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