SiC super GTO thyristor technology development: Present status and future perspective-Reference-Cited by-同舟云学术

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SiC super GTO thyristor technology development: Present status and future perspective

Published:2011-06 Issue: Volume: Page:
ISSN:
Container-title:2011 IEEE Pulsed Power Conference
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Author:

Zhanga Q.,Agarwal A.,Capell C.,Cheng L.,O'Loughlin M.,Burk A.,Palmour J.,Temple Victor,Ogunniyi Aderinto,O'Brien Heather,Scozzie Charles J.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6188417/6191397/06191677.pdf?arnumber=6191677

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physical insight into turn‐on transient of silicon carbide gate turn‐off thyristor;IET Power Electronics;2024-05

2. Simulation Study of 4H-SiC Low Turn-Off Loss and Snapback-Free Reverse-Conducting Gate Turn-Off Thyristor with N-Float Structure;Electronics;2024-02-17

3. Dual-Channel Isolated Gate Driver Power Supply Based on Ultrasonic Power Transmission Technology;2023 IEEE Fifth International Conference on DC Microgrids (ICDCM);2023-11-15

4. Implantation-free SiC thyristor with single-mask 3D termination near 10 kV;Solid-State Electronics;2023-03

5. 12.5 kV SiC Gate Turn Off Thyristor With Trench-Modulated JTE Structure;IEEE Transactions on Electron Devices;2022-03

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