6.5 kV SiC PiN Diodes with Improved Forward Characteristics-Reference-Cited by-同舟云学术

6.5 kV SiC PiN Diodes with Improved Forward Characteristics

Published:2010-04 Issue: Volume:645-648 Page:901-904
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Peters Dethard¹,Bartsch Wolfgang²,Thomas Bernd²,Sommer R.³

Affiliation:

1. SiCED Electronics Development

2. Infineon Technologies AG

3. Siemens AG

Abstract

The paper compares static and dynamic characteristics of 6.5 kV SiC PiN diodes fabricated with different p-emitters. The version with the thickest p-emitter (4 µm) showed the lowest forward voltage (3.4 V at 100 A/cm²) and the lowest (negative) temperature coefficient. Forward voltage DC stress tests revealed a stability within the measurement error of the test apparatus (<50 mV). The dynamic performance showed a soft recovery even at 4 kV. The reverse recovery charge Qrr is analyzed for different forward currents and junction temperatures. The dynamic losses of the SiC PiN diode are marginal with view to the application in industrial inverters.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.645-648.901.pdf

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