Author:
Matthus Christian D.,Huerner Andreas,Erlbacher Tobias,Bauer Anton J.,Frey Lothar
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. Demonstration of high voltage (600–1300 V), high current (10–140 A), fast recovery 4H-SiC p-i-n/Schottky(MPS) barrier diodes;Alexandrov;Solid-State Electron,2003
2. Ultrahigh-voltage SiC MPS diodes with hybrid unipolar/bipolar operation;Niwa;IEEE Trans Electron Devices,2017
3. Promise and challenges of high-voltage SiC bipolar power devices;Kimoto;Energies,2016
4. Semiconductor power devices: physics, characteristics, reliability;Lutz,2011
5. Huang Y, Erlbacher T, Buettner J, Wachutka G. A trade-off between nominal forward current density and surge current capability for 4.5kV SiC MPS diodes. In: 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Prague, 2016, p. 63–6.
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献