9 kV, 1 cm×1 cm SiC super gto technology development for pulse power-Reference-Cited by-同舟云学术

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9 kV, 1 cm×1 cm SiC super gto technology development for pulse power

Published:2009-06 Issue: Volume: Page:
ISSN:
Container-title:2009 IEEE Pulsed Power Conference
language:
Short-container-title:

Author:

Agarwal A.,Capell C.,Zhang Q.,Richmond J.,Callanan R.,O'Loughlin M.,Burk A.,Melcher J.,Palmour J.,Temple V.,O'Brien H.,J. Scozzie C.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5372360/5386092/05386305.pdf?arnumber=5386305

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A multiple-floating-zone-assisted graded-step-JTE for high-voltage 4H-SiC GTO thyristor;Applied Physics A;2021-12-08

2. A SiC gate turn-off thyristor with high di/dt for fast switching-on applications;Semiconductor Science and Technology;2021-11-01

3. Investigation on 4H-SiC gate turn-off thyristor with direct carrier extraction access to drift region for power conversion applications;Semiconductor Science and Technology;2020-03-19

4. An adaptive hybrid evolutionary immune multi-objective algorithm based on uniform distribution selection;Information Sciences;2020-02

5. Effects of Neutron Irradiation on the Static and Switching Characteristics of High-Voltage 4H-SiC p-type Gate Turn-off Thyristors;IEEE Transactions on Electron Devices;2019-09

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