Investigation on 4H-SiC gate turn-off thyristor with direct carrier extraction access to drift region for power conversion applications
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/1361-6641/ab76fa/pdf
Reference38 articles.
1. High current switching capabilities of a 3000 V SiC thyristor for fast turn-on applications
2. Design and development of a 7.2 kV/200A hybrid circuit breaker based on 15 kV SiC emitter turn-off (ETO) thyristor
3. Half-bridge inverter using 4H-SiC gate turn-off thyristors
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Physical insight into turn‐on transient of silicon carbide gate turn‐off thyristor;IET Power Electronics;2024-05
2. Simulation Study of 4H-SiC Low Turn-Off Loss and Snapback-Free Reverse-Conducting Gate Turn-Off Thyristor with N-Float Structure;Electronics;2024-02-17
3. Modeling and Analysis of SiC GTO Thyristor’s Dynamic Turn-On Transient;IEEE Transactions on Electron Devices;2022-11
4. Enhancing gate turn-off thyristor blocking characteristics by low temperature defect passivation technology;Semiconductor Science and Technology;2021-06-30
5. Hole-transmission enhancement in 4H-silicon carbide light triggered thyristor for low loss *;Semiconductor Science and Technology;2020-02-01
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3