Modeling and Analysis of SiC GTO Thyristor’s Dynamic Turn-On Transient
Author:
Affiliation:
1. College of Electrical and Information Engineering, Hunan University, Changsha, China
2. School of Mechatronic Systems Engineering, Simon Fraser University, Surrey, BC, Canada
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9926983/09908573.pdf?arnumber=9908573
Reference18 articles.
1. Turn-on of High-Voltage SiC Thyristors for Fast-Switching Applications
2. High-Speed Medium-Voltage SiC Thyristors for Pulsed Power Applications
3. Simulation Study of Switching-Dependent Device Parameters of High Voltage 4H-SiC GTOs
4. High dI/dt Pulse Switching of 1.0 cm2 SiC GTOs
5. Ultra-high voltage 4H-SiC gate turn-off thyristor for low switching time*
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1. Physical insight into turn‐on transient of silicon carbide gate turn‐off thyristor;IET Power Electronics;2024-05
2. Simulation Study of 4H-SiC Low Turn-Off Loss and Snapback-Free Reverse-Conducting Gate Turn-Off Thyristor with N-Float Structure;Electronics;2024-02-17
3. Abnormal Turn-ON Phenomenon of Large-Size and High-Voltage Reverse Blocking IGCT;IEEE Transactions on Power Electronics;2023-10
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