Simulation Research of the Long-Base Silicon Magnetic Sensitive Diode Negative-Resistance Characteristics on the Base of ATLAS

Abstract

According to the experimental results of the long-base silicon magnetic sensitive diode, this paper adopted ATLAS software to establish the two dimensional simulation model in order to research the negative resistance characteristics of the long-base silicon magnetic sensitive diode. Deep impurities were introduced into the long base to study the effect of the concentration and the distribution of deep impurities on the current-voltage characteristics of the long-base silicon magnetic sensitive diode. The simulation results showed that the deep impurity in the long base was the main factor that impacted on the negative resistance characteristics of the long-base silicon magnetic sensitive diode.