Mechanism research of negative resistance oscillations characteristics of the silicon magnetic sensitive transistor with long base region

Abstract

A silicon magnetic sensitive transistor (SMST) with the negative resistance oscillation phenomenon is presented in this paper. The SMST of cubic structure is composed of three regions and three electrodes (E, C and B). Two of the regions (collector region and base region) are designed on the top surface of the SMST, and the emitter region is designed at the bottom of the SMST. Using microelectromechanical system (MEMS) technology, the chip is fabricated on [Formula: see text] orientation p-type silicon (near intrinsic) wafer and packaged on printed circuit board (PCB). When collector voltage (V[Formula: see text]) and the base injecting current (I[Formula: see text]) are a certain value, the experimental results show that the collector current (I[Formula: see text]) attains negative resistance oscillation phenomenon and it is influenced by the external magnetic field (B) and temperature (T). Based on the effect of deep-level impurities on the carrier net recombination rate, theoretical analysis demonstrates that the deep-level impurities are the main factors of the appearance for oscillations phenomenon.