Application of response surface methodology to investigate nano-finishing of the silicon wafer
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Published:2021-06-19
Issue:
Volume:
Page:2150134
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ISSN:0217-9792
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Container-title:International Journal of Modern Physics B
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language:en
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Short-container-title:Int. J. Mod. Phys. B
Author:
Mosavat Mohammad1ORCID,
Rahimi Abdolreza1
Affiliation:
1. Department of Mechanical Engineering, Amirkabir University of Technology, 424 Hafez Ave., Tehran 15875-4413, Iran
Abstract
The aim of this research is study the effect of polishing factors to the reduction ratio rate in surface roughness (%[Formula: see text] during the Magnetic Abrasive Finishing (MAF) process using Response Surface Methodology (RSM). The parameters studied were machining gap, rotational speed, abrasive size and magnetic abrasive particle (MAP) size. Quadratic models were developed by applying Box–Behnken Design (BBD). Also, experiments were carried out on the silicon wafer and results of surface roughness data were analyzed by using analysis of variance (ANOVA) and significant factors were identified. According to our findings, the maximum %[Formula: see text] value and the best surface roughness of silicon wafer achieved 3.70 and 51 nm, respectively.
Publisher
World Scientific Pub Co Pte Lt
Subject
Condensed Matter Physics,Statistical and Nonlinear Physics