Frequency Characteristics Research for the Negative Resistance Oscillations Phenomenon of a Silicon Magnetic Sensitivity Transistor-Reference-Cited by-同舟云学术

Frequency Characteristics Research for the Negative Resistance Oscillations Phenomenon of a Silicon Magnetic Sensitivity Transistor

Published:2015-05 Issue: Volume:645-646 Page:120-125
ISSN:1662-9795
Container-title:Key Engineering Materials
language:
Short-container-title:KEM

Author:

Zhao Xiao Feng¹,Li Yi Fan¹,Lv Mei Wei¹,Wen Dian Zhong¹,Zhang Hong Quan¹

Affiliation:

1. Heilongjiang University

Abstract

A silicon magnetic sensitivity transistor (SMST) with negative resistance oscillations phenomenon is presented in this paper, which is constituted by emitter (E), base (B) and collector (C). The SMST chip is fabricated on <100> orientation high resistivity C-type silicon cup by using MEMS technology. Experiment results show, when external magnetic fieldB=0 T, base injection currentIbis the scope of 1.5mA to 1.7mA andVCEis greater than 4.0V, the collector currentIcappears negative resistance oscillation phenomenon, the oscillation frequency will increase with the increase of theVCE.Icchanges with external magnetic fieldB, whereVCEandIbare constant. With the condition of theIb=1.5 mA andVCE=9.0 V, the oscillation frequency ofB=0 mTand B=-150 mT are 5.88 kHz and 7.60 kHz, respectively.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://www.scientific.net/KEM.645-646.120.pdf

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