Characteristics Research of New Type Silicon Magnetic Sensitivity Transistor Differential Structure by ATLAS-Reference-Cited by-同舟云学术

Characteristics Research of New Type Silicon Magnetic Sensitivity Transistor Differential Structure by ATLAS

Published:2014-07 Issue: Volume:981 Page:903-908
ISSN:1662-8985
Container-title:Advanced Materials Research
language:
Short-container-title:AMR

Author:

Zhao Xiao Feng¹,Guan Han Yu¹,Sui Huan¹,Wen Dian Zhong¹

Affiliation:

1. Heilongjiang University

Abstract

According to the experimental results of new type silicon magnetic sensitivity transistor (SMST), the simulation models of new type SMSTs with different base region lengths and widths were established by ATLAS software. The simulation results of optimizing the geometric parameters demonstrate that the max collector current relative magnetic sensitivity can be achieved when the base region length and width are 170 μm and 30 μm, and the simulation model of the differential structure of new type SMST was established based on it. The simulation results indicate that the max collector current relative magnetic sensitivity is 322％/T for new type SMST differential structure when the base currents are 5.0 mA and the collector voltages are 5.0 V, and it can improve the magnetic sensitivity and ameliorate temperature characteristics.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

Link

https://www.scientific.net/AMR.981.903.pdf

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