Affiliation:
1. Nanjing Electronic Devices Institute
2. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory
Abstract
4H-SiC JBS diode with breakdown voltage higher than 4.5 kV, has been successfully fabricated on 4H-SiC wafers with epitaxial layer. In this paper we report the design, the fabrication, and the electrical characteristics of 4H-SiC JBS diode. Numerical simulations have been performed to select the doping level and thickness of the drift layer and the effectiveness of the edge termination technique. The epilayer properties of the N-type are 55 μm with a doping of 9×1014cm−3. The diodes were fabricated with a floating guard rings edge termination. The on-state voltage was 4V at JF=80 A/cm2
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference8 articles.
1. P. Brosselard, X. Jorcld, M. Vellvehil: Power Semiconductor Devices and ISPSD'07 pages 285-288.
2. J. Millan and P. Godignon: Electron Devices (CDE), 2013 Spanish Conference on pages 293-296.
3. Baliga.B. J: Electron Device Letters Vol. 8 pages 407-409.
4. P. Brosselard, A. Perez-Tomas and N. Camara: Power Semiconductor Devices and ISPSD'08 pages 237-240.
5. J.H. Zhao, P. Alexandrov and L. Fursin: Electronics Letters Vol. 38 No. 22 pages 1389-1390.
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